Free Order - District Court of Delaware - Delaware

Case 1:04-cv-01371-JJF Document 232 Filed O3/31/2006 Page 1 of 3
IN THE UNITED STATES DISTRICT COURT
FOR THE DISTRICT OF DELAWARE
POWER INTEGRATIONS, INC., a :
Delaware corporation, :
Plaintiff, ;
v. ; C.A. No. 04-1371-JJE
FAIRCHILD SEMICONDUCTOR i
INTERNATIONAL, INC., a Delaware:
corporation, and FAIRCHILD :
SEMICONDUCTOR CORPORATION, a :
Delaware corporation, :
Defendants. ;
O R D E R
At Wilmington, this gil day of March 2006, for the reasons
discussed in the Memorandum Opinion issued this date;
IT IS HEREBY ORDERED that the following terms and/or phrases
in U.S. Patent Nos. 4,811,075 (the “‘075 patent"), 6,107,851 {the
“‘851 patent"), 6,229,366 (the “‘366 patent"), 6,249,876 (the
“‘876 patent") are assigned the following meanings:
1. The term “MOS transistor" means “a metal oxide
transistor."
2. The term “substrate” means “the physical material
on which a transistor or microcircuit is fabricated."
3. The phrase “a pair of laterally spaced pockets of
semiconductor material of a second conductivity type within the
substrate" means “two laterally spaced pockets of semiconductor
material of the opposite conductivity type from the substrate."

Case 1:04-cv-01371-JJF Document 232 Filed O3/31/2006 Page 2 of 3
4. The phrase “a surface adjoining layer of material
of the first conductivity type on top of an intermediate portion
of the extended drain region between the drain contact pocket and
the surface adjoining positions” is construed according to its
plain meaning, and further construction by the Court is not
required.
5. The phrase “said top layer of material" is
construed according to its plain meaning when read in the context
of the claim, and further construction by the Court is not
required.
6. The term “reverse bias voltage" means “a voltage
applied across a rectifying junction with a polarity that
provides a high—resistance path."
7. The phrase “substrate region thereunder which
forms a channel" is construed according to its plain meaning when
read in the context of the claim, and further construction by the
Court is not required.
8. The term “frequency jittering” means “varying the
switching frequency of a switch mode power supply about a target
frequency in order to reduce electromagnetic interference.”
9. The term “coupled” means that “two circuits are
coupled when they are connected such that voltage, current or
control signals pass from one to another.”
lO. The term “primary voltage" means a “base or
initial voltage" and the term is not defined by reference to the

Case 1:04-cv-01371-JJF Document 232 Filed O3/31/2006 Page30f3
source from which it may be generated.
ll. The term “secondary voltage" means “a subsequent
or additional voltage."
12. The term “combining” means “adding together.”
13. The term “supp1emental voltage" means “a voltage
in addition to the primary voltage.”
14. The term “soft start circuit" is a means—plus—
function element. The functions of the various “soft start
circuits" are construed in accordance with the plain meaning of
the claims setting forth such soft start circuit functions. The
corresponding structures related to the “soft start circuit" are
shown in Figures 3, 6 and 9 of the ‘366 patent and described in
the specification of the ‘366 patent at col. 6, ll. 7-17; col. 6,
l. 35—col. 7, l. 18; col. 11, ll. 40-50 and col. 12, ll. 5-10.
15. The phrase “frequency variation circuit" means “a
structure that provides the frequency variation signal.”
16. The phrase “frequency variation signal" means “an
internal signal that cyclically varies in magnitude during a
fixed period of time and is used to modulate the frequency of the
oscillation signal within a predetermined frequency range.”
D S T DISTRICT J GE