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JONES DAY
SILICON VALLEY OFFICE · 1755 EMBARCADERO ROAD · PALO ALTO, CALIFORNIA 94303 TELEPHONE: 650-739-3939 · FACSIMILE: 650-739-3900
Direct Number: (650) 739-3910 [email protected]
April 27, 2008
BY E-MAIL John C. Spaccarotella, Esq. Kirkland & Ellis LLP 153 East 53rd Street New York, NY 10022-4611
Re:
ON Semiconductor Corp. v. Samsung Electronics Co., Ltd. Civil Action No. 1:07-cv-00449 (JJF) Samsung Electronics Co., Ltd. v. ON Semiconductor Corp. Civil Action No. 1:06-cv-00720 (JJF)
Dear Mr. Spaccarotella: Toward clarifying the issues for the Court, please be advised that ON Semiconductor amends its proposed constructions as follows. '644 Patent: "programmable termination" "an electrical circuit that can be configured to provide various levels or degrees for the dissipation or absorption of electrical energy from a transmission line or other device;" "termination signal" "a signal that dissipates or absorbs energy from a transmission line or other device;" "terminate" "to dissipate or absorb energy from a transmission line or other device;" '827 Patent: "altering the flow rate of said solution through said opening" - "to dissipate or absorb energy from a transmission line or other device;"
'177 Patent: "removing said photoresist pattern" - "getting rid of the photoresist pattern;"
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JONES DAY
John C. Spaccarotella, Esq. April 27, 2008 Page 2 "removing remaining photoresist" - "getting rid of the remaining photoresist;" and "protective oxide layer" "an oxide layer of at least 30A thickness that functions to prevent damage to an underlying layer during subsequent processing." Sincerely, JONES DAY
Guadalupe M. Garcia
SVI-57355v1
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