Free Declaration - District Court of Delaware - Delaware


File Size: 10,688.7 kB
Pages: 39
Date: September 7, 2008
File Format: PDF
State: Delaware
Category: District Court of Delaware
Author: unknown
Word Count: 906 Words, 4,990 Characters
Page Size: Letter (8 1/2" x 11")
URL

https://www.findforms.com/pdf_files/ded/38623/102.pdf

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Case 1:07-cv-00449-JJF

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JONES DAY
SILICON VALLEY OFFICE · 1755 EMBARCADERO ROAD · PALO ALTO, CALIFORNIA 94303 TELEPHONE: 650-739-3939 · FACSIMILE: 650-739-3900

Direct Number: (650) 739-3910 [email protected]

April 27, 2008

BY E-MAIL John C. Spaccarotella, Esq. Kirkland & Ellis LLP 153 East 53rd Street New York, NY 10022-4611

Re:

ON Semiconductor Corp. v. Samsung Electronics Co., Ltd. Civil Action No. 1:07-cv-00449 (JJF) Samsung Electronics Co., Ltd. v. ON Semiconductor Corp. Civil Action No. 1:06-cv-00720 (JJF)

Dear Mr. Spaccarotella: Toward clarifying the issues for the Court, please be advised that ON Semiconductor amends its proposed constructions as follows. '644 Patent: "programmable termination" ­ "an electrical circuit that can be configured to provide various levels or degrees for the dissipation or absorption of electrical energy from a transmission line or other device;" "termination signal" ­ "a signal that dissipates or absorbs energy from a transmission line or other device;" "terminate" ­ "to dissipate or absorb energy from a transmission line or other device;" '827 Patent: "altering the flow rate of said solution through said opening" - "to dissipate or absorb energy from a transmission line or other device;"

'177 Patent: "removing said photoresist pattern" - "getting rid of the photoresist pattern;"

AT L A N TA · B EI J I N G · BRUSSELS I RV I N E · LONDON · L O S A NG E L E S SAN DIEGO · SAN FRANCISCO ·

· C H I C AG O · CLEVELAND · CO L U MB U S · · MA D R I D · MI L A N · MO S C OW · MU N I C H SHANGHAI · S I L I C O N VA L L E Y · SINGAPORE

·

DALLAS · F R A N K F U RT · N EW D E L H I · N EW YO R K · SYDNEY · TA I P E I ·

HO N G K O NG · PA R I S · TO K Y O ·

·

HO U S TO N P I T T S B U RG H W A S HI N G TO N

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JONES DAY

John C. Spaccarotella, Esq. April 27, 2008 Page 2 "removing remaining photoresist" - "getting rid of the remaining photoresist;" and "protective oxide layer" ­ "an oxide layer of at least 30A thickness that functions to prevent damage to an underlying layer during subsequent processing." Sincerely, JONES DAY

Guadalupe M. Garcia
SVI-57355v1

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